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Publisher Correction: Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Di, Zengfeng
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Nature ( 2024 ) Cite this article

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Correction to: Nature https://doi.org/10.1038/s41586-024-07786-2 Published online 7 August 2024

In the version of the article initially published, in the key to Fig. 1g , the label now reading “c-Al 2 O 3 2 nm” originally read “a-Al 2 O 3 2 nm” and has now been amended in the HTML and PDF versions of the article.

Fig. 1: Correct figure

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Authors and Affiliations

  1. State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Daobing Zeng, Ziyang Zhang, Zhongying Xue, Miao Zhang, Ziao Tian & Zengfeng Di

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Daobing Zeng & Ziyang Zhang

  3. Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Kowloon, China

    Paul K. Chu

  4. Department of Materials Science, Fudan University, Shanghai, China

    Yongfeng Mei

Authors

  1. Daobing Zeng

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  2. Ziyang Zhang

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  3. Zhongying Xue

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  4. Miao Zhang

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  5. Paul K. Chu

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  6. Yongfeng Mei

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  7. Ziao Tian

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  8. Zengfeng Di

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Corresponding authors

Correspondence to Ziao Tian or Zengfeng Di .

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Zeng, D., Zhang, Z., Xue, Z. et al. Publisher Correction: Single-crystalline metal-oxide dielectrics for top-gate 2D transistors. Nature (2024). https://doi.org/10.1038/s41586-024-08001-y

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  • DOI : https://doi.org/10.1038/s41586-024-08001-y

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